PART |
Description |
Maker |
PTFC270101M PTFC270101M-15 |
High Power RF LDMOS Field Effect Transistor
|
Infineon Technologies A...
|
PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
PTF210301 PTF210301A PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
PTF080101S PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
|
INFINEON[Infineon Technologies AG]
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
IFS75B12N3T4B31 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|